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GA100TS120U Datasheet PDF

International Rectifier GA100TS120U

HALF-BRIDGE IGBT INT-A-PAK

Part No. GA100TS120U
Datasheet GA100TS120U Download
Manufacturer
International Rectifier
Description HALF-BRIDGE IGBT INT-A-PAK
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GA100TS120U datasheet page 1 preview

FEATURES

● Generation 4 IGBT technology
● UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode
● Very low conduction and switching losses
● HEXFRED™ antiparallel diodes with ultra- soft recovery
● Industry standard package
● UL approved Ultra-FastTM Speed IGBT VCES = 1200V VCE(on) typ. = 2.4V @VGE = 15V, IC = 100A Benefits
● Increased operating efficiency
● Direct mounting to heatsink
● Performance optimized for power conversion: UPS, SMPS, Welding
● Lower EMI, requires less snubbing

ABSOLUTE MAXIMUM RATINGS

Parameter VCES IC @ TC = 25°C ICM ILM IFM VGE VISOL PD @ TC = 25°C PD @ TC = 85°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Pulsed Collector Current ➀ Peak Switching Current ➁ Peak Diode Forward Current Gate-to-Emitter Voltage RMS Isolation Voltage, Any Terminal To Case, t = 1 min Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature Range Storage Temperature Range Max. 1200 10...
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