International Rectifier GA100TS60U
IGBT
FEATURES
● Generation 4 IGBT technology● UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode
● Very low conduction and switching losses
● HEXFRED™ antiparallel diodes with ultra- soft recovery
● Industry standard package
● UL recognition pending Ultra-FastTM Speed IGBT VCES = 600V VCE(on) typ. = 1.6V @VGE = 15V, IC = 100A Benefits
● Increased operating efficiency
● Direct mounting to heatsink
● Performance optimized for power conversion: UPS, SMPS, Welding
● Lower EMI, requires less snubbing
ABSOLUTE MAXIMUM RATINGS
Parameter VCES IC @ TC = 25°C ICM ILM IFM VGE VISOL PD @ TC = 25°C PD @ TC = 85°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Pulsed Collector Current● Peak Switching Current‚ Peak Diode Forward Current Gate-to-Emitter Voltage RMS Isolation Voltage, Any Terminal To Case, t = 1 min Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature Range Storage Temperature Range Max.