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GA200SA60S Datasheet PDF

International Rectifier GA200SA60S

INSULATED GATE BIPOLAR TRANSISTOR

Part No. GA200SA60S
Datasheet GA200SA60S Download
Manufacturer
International Rectifier
Description INSULATED GATE BIPOLAR TRANSISTOR
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GA200SA60S datasheet page 1 preview

FEATURES

● Standard : Optimized for minimum saturation voltage and low operating frequencies up to 1kHz
● Lowest conduction losses available
● Fully isolated package ( 2,500 volt AC)
● Very low internal inductance ( 5 nH typ.)
● Industry standard outline C Standard Speed IGBT VCES = 600V G E VCE(on) typ. = 1.10V @VGE = 15V, IC = 100A n-channel Benefits
● Designed for increased operating efficiency in power conversion: UPS, SMPS, Welding, Induction heating
● Easy to assemble and parallel
● Direct mounting to heatsink
● Plug-in compatible with other SOT-227 packages S O T -2 2 7

ABSOLUTE MAXIMUM RATINGS

Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM VGE EARV VISOL PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Collector-to-Emitter Breakdown Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Q Clamped Inductive Load Current R Gate-to-Emitter Voltage Reverse Voltage Avalanche Energy S RMS Isolation Voltage, Any Terminal to Case, t=1 min Maximum Power Dissipation Maximum Power Dissipation Operating Junction Storage Temperature Range Mounting Torque, 6-32 or M3 Screw Max.
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