International Rectifier GIB10B60KD1
IRGIB10B60KD1
FEATURES
● Low VCE (on) Non Punch Through IGBT Technology.● Low Diode VF.
● 10µs Short Circuit Capability.
● Square RBSOA.
● Ultrasoft Diode Reverse Recovery Characteristics.
● Positive VCE (on) Temperature Coefficient.
● Maximum Junction Temperature Rated at 175°C G E C VCES = 600V IC = 10A, TC=100°C tsc > 10µs, TJ=150°C Benefits
● Benchmark Efficiency for Motor Control.
● Rugged Transient Performance.
● Low EMI.
● Excellent Current Sharing in Parallel Operation. n-channel VCE(on) typ. = 1.7V
ABSOLUTE MAXIMUM RATINGS
Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM IF @ TC = 25°C IF @ TC = 100°C IFM VISOL VGE PD @ TC = 25°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulse Collector Current (Ref.Fig.C.T.5) Clamped Inductive Load current TO-220 Full-Pak Max. 600 16 10 A 32 32 16 10 32 2500 ±20 44 22 -55 to +175 °C 300 (0.063 in. (1.6mm) from case) 10 lbf.in (1.1N.m) W V Units V c Diode Continuous Forward Current Diode Continuous...