GP50B60PD1 Datasheet PDF

APPLICATIONS

● Telecom and Server SMPS
● PFC and ZVS SMPS Circuits
● Uninterruptable Power Supplies
● Consumer Electronics Power Supplies

FEATURES

● NPT Technology, Positive Temperature Coefficient
● Lower VCE(SAT)
● Lower Parasitic Capacitances
● Minimal Tail Current
● HEXFRED Ultra Fast Soft-Recovery Co-Pack Diode
● Tighter Distribution of Parameters
● Higher Reliability Benefits
● Parallel Operation for Higher Current

APPLICATIONS

● Lower Conduction Losses and Switching Losses
● Higher Switching Frequency up to 150kHz C G E n-channel VCES = 600V VCE(on) typ. = 2.00V @ VGE = 15V IC = 33A Equivalent MOSFET Parameters RCE(on) typ. = 61mΩ ID (FET equivalent) = 50A E C G TO-247AC

ABSOLUTE MAXIMUM RATINGS

VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM IF @ TC = 25°C IF @ TC = 100°C IFRM VGE PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Parameter Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulse Collector Current (Ref. Fig. C.T.4) dClamped Inductive Load C...