HF05D060ACE Datasheet PDF

FEATURES

• GEN3 Hexfred Technology • Low VF • Low IRR • Low tRR • Soft Reverse Recovery Benefits • Benchmark Efficiency for Motor Control

APPLICATIONS

• Rugged Transient Performance • Low EMI • Excellent Current Sharing in Parallel Operation • Qualified for Industrial Market Hexfred Die in Wafer Form 600V IF(nom)=5A VF(typ)= 1.15V @ IF(nom) @ 25°C Motor Control Antiparallel Diode 150mm Wafer Reference Standard IR Package Part: IRGS10B60KD Parameter

ELECTRICAL CHARACTERISTICS

(Wafer Form)

DESCRIPTION

Guaranteed (min, max) Test Conditions VF Forward Voltage Drop BVR Reverse Breakdown Voltage IRM Reverse Leakage Current 0.8V min, 1.05V max 600V min 10µA max IC = 1A, TJ = 25°C TJ = 25°C, IR = 1mA TJ = 25°C, VR = 600V

MECHANICAL DATA

Nominal Backmetal Composition, (Thickness) Cr (0.1µm)- NiV (0.2µm) - Ag (0.25µm) Nominal Front Metal Composition, (Thickness) 99% Al/1% Si, (3µm) Dimensions 0.075'' x 0.076" Wafer Diameter 150mm, with std. < 100 > flat Wafer Thickness, Tolerance 376µm, +/-15µm Relevant Die Mechanical Dwg.