ELECTRICAL CHARACTERISTICS
( Wafer Form ) Parameter V FM BV R IRM DESCRIPTION
Forward Voltage Reverse Breakdown Voltage Reverse Leakage Current Guaranteed (Min/Max) 1.7V Max. 600V Min. 10µA Max. Test Conditions TJ = 25°C, IF = 12.0A TJ = 25°C, IR = 200µA TJ = 25°C, VR = 600V MECHANICAL DATA
Nominal Back Metal Composition, Thickness Nominal Front Metal Composition, Thickness Chip Dimensions Wafer Diameter Wafer Thickness Relevant Die Mechanical Dwg. Number Minimum Street Width Reject Ink Dot Size Recommended Storage Environment: Cr-Ni-Ag ( 1kA-4kA-6kA ) 99% Al, 1% Si (3 microns) 0.085" x 0.164" 150mm, with std. < 100 > flat .015" ± .003" 01-5160 100 Microns 0.25mm Diameter Minimum Store in original container, in dessicated nitrogen, with no contamination Reference Standard IR packaged part ( for design ) : IRGBC30MD2 Die Outline NOTES : 1. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ) 2. CONTROLLING DIMENSION : ( INCH ) 3. DIMENSIONAL TOLERANCES : BONDING PADS : < 0.635 TOLERANCE = ± 0.013 WIDTH < (.0250) TOLERANCE = ± (.0005) & > 0.635 TOLERANCE = ± 0.025 LENGTH > (.0250) TOLERANCE = ± (.0010) OVERALLDIE < 1.270 TOLRANCE = ± 0.
International Rectifier