International Rectifier IPS031R
The IPS031R are fully protected three terminal SMART POWER MOSFETs that feature over-current, over-temperature, ESD protection and drain to source active clamp.These devices combine a HEXFET® POWER MOSFET and a gate driver. They offer full protection and high reliability required in harsh environments. The driver allows short switching times and provides efficient protection by turning OFF the power MOSFET when the temperature exceeds 165oC or when the drain current reaches 14A.FEATURES
● Over temperature shutdown● Over current shutdown
● Active clamp
● Low current & logic level input
● E.S.D protection
DESCRIPTION
The device restarts once the input is cycled. The avalanche capability is significantly enhanced by the active clamp and covers most inductive load demagnetizations. Typical Connection Product Summary Rds(on) V clamp Ishutdown Ton/Toff 60mΩ (max) 50V 14A 1.5µs Package 3-Lead D-Pak Load R in series (if needed) IN " Logic signal (Refer to lead assignment for correct pin configuration) control ! D S 1 IPS031RABSOLUTE MAXIMUM RATINGS
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are referenced to SOURCE lead. (TAmbient = 25oC unless otherwise specified). PCB mounting uses the standard footprint with 70 µm copper thickness. Symbol Vds Vin Iin, max Isd cont. Parameter Maximum drain to source voltage Maximum input voltage Maximum IN current Diode max. continuous current (1) rth=100oC/W Min. — -0.3 -10 — Max.