International Rectifier IPS041L
The IPS041L is a fully protected three terminal SMART POWER MOSFET that features over-current, overtemperature, ESD protection and drain to source active clamp.This device combines a HEXFET® POWER MOSFET and a gate driver. It offers full protection and high reliability required in harsh environments. The driver allows short switching times and provides efficient protection by turning OFF the power MOSFET when the temperature exceeds 165oC or when the Drain current reaches 2A.FEATURES
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● Over temperature shutdown Over current shutdown Active clamp Low current & logic level input E.S.D protection Product Summary Rds(on) V clamp Ishutdown Ton/Toff 500mΩ (max) 50V 2A 1.5µs
DESCRIPTION
The device restarts once the input is cycled. The avalanche capability is significantly enhanced by the active clamp and covers most inductive load demagnetizations. Package 3 Lead SOT223 Typical Connection Load R in series (if needed) Q D IN control S S Logic signal (Refer to leads assignments for correct pin configuration) 1 IPS041LABSOLUTE MAXIMUM RATINGS
Absolute maximum ratings indicates sustained limits beyond which damage to the device may occur. All voltage parameters are referenced to SOURCE lead. (TAmbient = 25oC unless otherwise specified). PCB mounting uses the standard footprint with 70 µm copper thickness. Symbol Parameter Vds Vin Iin, max Isd cont. Maximum drain to source voltage Maximum input voltage Maximum IN current Diode max. continuous current (1) (rth=125oC/W) Isd pulsed Diode max. pulsed current (1) (1) P d ESD1 ESD2 T stor.