FEATURES
n Output Power MOSFETs in half-bridge configuration n 500V Rated Breakdown Voltage n High side gate drive designed for bootstrap operation n Matched propagation delay for both channels n Independent high and low side output channels n Undervoltage lockout n 5V Schmitt-triggered input logic n Half-Bridge output out of phase with HIN Product Summary VIN (max) ton/off trr RDS(on) PD (TA = 25 ºC) 500V 130 ns 270 ns 3.0Ω 2.0W DESCRIPTION
Proprietary HVIC and latch immune CMOS technologies, along with the HEXFET® power MOSFET technology, enable ruggedized single package construction. The output features two HEXFETs in a half-bridge configuration with a high pulse current buffer stage designed for minimum cross-conduction in the halfbridge. Propagation delays for the high and low side power MOSFETs are matched to simplify use. The device can operate up to 500 volts. Package IR02H420 9506 Typical Connection U P V IN T O 5 0 0 V D C B U S IR 0 2 H 4 2 0 V C C 1 V C C V B 6 H IN 2 H IN...