DESCRIPTION
l l IRF1010NSPbF IRF1010NLPbF HEXFET® Power MOSFET D PD - 95103 VDSS = 55V RDS(on) = 11mΩ G S ABSOLUTE MAXIMUM RATINGS
ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS IAR EAR dv/dt TJ TSTG The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. The through-hole version (IRF1010NL) is available for lowprofile applications. Advanced HEXFET ® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. ID = 85A IRF1010NSPbF IRF1010NLPbF D 2 Pak TO-262 Parameter Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Dr...
International Rectifier
