International Rectifier IRF1010ZS
AUTOMOTIVE MOSFET
| Part No. | IRF1010ZS |
|---|---|
| Datasheet | IRF1010ZS Download |
| Manufacturer |  International Rectifier |
| Description | AUTOMOTIVE MOSFET |
| Buy | Stock & Price |
FEATURES
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● Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax G VDSS = 55V RDS(on) = 7.5mΩ S
DESCRIPTION
Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low onresistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications. ID = 75A TO-220AB IRF1010Z D2Pak IRF1010ZS Max. 94 66 75 360 140 TO-262 IRF1010ZL Units AABSOLUTE MAXIMUM RATINGS
Parameter ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) ID @ TC = 100°C Continuous Drain Current, VGS @ 10V ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Package Limited) Pulsed...
