IRF1018EPbF Datasheet PDF

APPLICATIONS

l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode dV/dt and dI/dt Capability PD - 97125 IRF1018EPbF IRF1018ESPbF IRF1018ESLPbF HEXFET® Power MOSFET D VDSS 60V RDS(on) typ. 7.1m: G max. 8.4m: S ID 79A D DS G TO-220AB IRF1018EPbF G Gate D D DS G D2Pak IRF1018ESPbF DS G TO-262 IRF1018ESLPbF D Drain S Source

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter ID @ TC = 25°C Continuous Drain Current, VGS @ 10V ID @ TC = 100°C Continuous Drain Current, VGS @ 10V IDM Pulsed Drain Current c PD @TC = 25°C Maximum Power Dissipation Linear Derating Factor VGS dv/dt TJ TSTG Gate-to-Source Voltage Peak Diode Recovery e Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case) Mounting torque, 6-32 or M3 screw...