International Rectifier IRF1302L
Power MOSFET
| Part No. | IRF1302L |
|---|---|
| Datasheet | IRF1302L Download |
| Manufacturer |  International Rectifier |
| Description | Power MOSFET |
| Buy | Stock & Price |
DESCRIPTION
Specifically designed for Automotive applications, this Stripe Planar design of HEXFET® Power MOSFET utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications. D2Pak IRF1302S TO-262 IRF1302LABSOLUTE MAXIMUM RATINGS
Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Max.
