International Rectifier IRF1324SPBF
Power MOSFET
APPLICATIONS
l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode dV/dt and dI/dt Capability l Lead-Free D HEXFET® Power MOSFET G S VDSS RDS(on) typ. max. ID (Silicon Limited) ID (Package Limited) 24V 1.3mΩ 1.65mΩ 340A 195A c G D S S D G TO-262 IRF1324LPbF D2Pak IRF1324SPbF G D S Gate Drain SourceABSOLUTE MAXIMUM RATINGS
Symbol ID @ TC = 25°C ID @ TC = 100°C ID @ TC = 25°C IDM PD @TC = 25°C VGS dv/dt TJ TSTG Parameter Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V (Wire Bond Limited) Pulsed Drain Current Maximum Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery Operating Junction and Max. 340 240 195 1420 300 2.0 ± 20...