FEATURES
l l l l l l l Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free Halogen-Free HEXFET® Power MOSFET D VDSS = 40V RDS(on) = 3.7mΩ G S DESCRIPTION
Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . ID = 75A TO-220AB IRF1404ZGPbF ABSOLUTE MAXIMUM RATINGS
Parameter ID @ TC = 25°C ID @ TC = 100°C ID @ TC = 25°C IDM PD @TC = 25°C VGS EAS (Thermally limited) EAS (Tested ) IAR EAR TJ TSTG Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V (Package Limited) Pulsed Drain Current Max. 190 130 75 750 220 1.5 ± 20 320 480 See Fig.12a, 12b, 15, 16 -55 to + 175 Units A Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Single Pulse Avalanche Energy Tested Value Avalanche Current Repetitive A...
International Rectifier
