APPLICATIONS
l Industrial motor drive Benefits l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating G l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free DESCRIPTION
Additional features of this HEXFET power MOSFET are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. ABSOLUTE MAXIMUM RATINGS
Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor VGS EAS IAR EAR dv/dt Gate-to-Source Voltage d Single Pulse Avalanche Energy à Avalanche Current i Repetitive Avalanche Energy e Peak Diode recovery dv/dt TJ TSTG Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting Torque, 6-32 or M3 screw Thermal Resistance Parameter RθJC RθCS RθJA Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient PD - 94969B IRF1405PbF HEXFET® Power MOSFET D VDSS = 55V RDS(on) = 5.3mΩ ID = 169A S D DS G TO-220AB Max.
International Rectifier
