DESCRIPTION
Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. The through-hole version (IRF1407L) is available for lowprofile applications. ID = 100AV D2Pak IRF1407S TO-262 IRF1407L ABSOLUTE MAXIMUM RATINGS
Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TA = 25°C PD @TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ 10VX Continuous Drain Current, VGS @ 10VX Pulsed Drain Current QX Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche EnergyRX Avalanche CurrentQ Repetitive Avalanche EnergyW Peak Diode Recovery dv/dt SX Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Max.
International Rectifier
