APPLICATIONS
l Industrial Motor Drive IRF1503SPbF IRF1503LPbF HEXFET® Power MOSFET D Benefits l l l l l VDSS = 30V RDS(on) = 3.3mΩ Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax G S ID = 75A DESCRIPTION
Additional features of this HEXFET power MOSFET are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. D2Pak IRF1503SPbF TO-262 IRF1503LPbF ABSOLUTE MAXIMUM RATINGS
Parameter ID @ TC ID @ TC ID @ TC IDM PD @TC = 25°C = 100°C = 25°C = 25°C Continuous Drain Current, VGS @ 10V (Silicon limited) Continuous Drain Current, V GS @ 10V (See Fig.9) Continuous Drain Current, VGS @ 10V (Package limited) Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Single Pulse Avalanche Energy Tested Value Avalanche Current Repetitive Avalanche Energy Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting Torque, 6-32 or M3 screw Max.
International Rectifier
