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IRF250 Datasheet PDF

International Rectifier IRF250

The HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state resistance combined with high transconductance; superior reverse energy and diode recovery dv/dt capability.
Part No. IRF250
Datasheet IRF250 Download
Manufacturer
International Rectifier
Description HEXFET TRANSISTORS
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IRF250 datasheet page 1 preview

FEATURES

: n Repetitive Avalanche Ratings n Dynamic dv/dt Rating n Hermetically Sealed n Simple Drive Requirements n Ease of Paralleling

ABSOLUTE MAXIMUM RATINGS

ID @ VGS = 10V, TC = 25°C ID @ VGS = 10V, TC = 100°C IDM PD @ TC = 25°C Parameter Continuous Drain Current Continuous Drain Current Pulsed Drain Current ➀ Max. Power Dissipation Linear Derating Factor VGS EAS IAR EAR dv/dt Gate-to-Source Voltage Single Pulse Avalanche Energy ➁ Avalanche Current ➀ Repetitive Avalanche Energy ➀ Peak Diode Recovery dv/dt ➂ TJ TSTG Operating Junction Storage Temperature Range Lead Temperature Weight Units 30 19 A 120 150 W 1.2 W/°C ±20 V 500 mJ 30 A 15 mJ 5.0 V/ns -55 to 150 oC 300 (0.063 in. (1.6mm) from case for 10s) 11.5 (typical) g For footnotes refer to the last page 1 01/22/01 IRF250

ELECTRICAL CHARACTERISTICS

@ Tj = 25°C (Unless Otherwise Specified) Parameter Min Typ Max Units Test Conditions BVDSS Drain-to-Source Breakdown Voltage 200 — — V VGS = 0V, ID = 1.0mA ∆BVDSS/∆TJ Temperature Coeffi...
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