International Rectifier IRF2805S
This value determined from sample failure population.APPLICATIONS
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● IRF2805S IRF2805L HEXFET® Power MOSFET D Climate Control ABS Electronic Braking Windshield Wipers Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax
FEATURES
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● VDSS = 55V G S RDS(on) = 4.7mΩ ID = 135AV
DESCRIPTION
Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this product are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications. D2Pak IRF2805S TO-262 IRF2805LABSOLUTE MAXIMUM RATINGS
Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS EAS EAS (6 sigma) IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS...