IRF3007 Datasheet PDF

APPLICATIONS

● IRF3007 HEXFET® Power MOSFET D 42 Volts Automotive Electrical Systems Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Automotive [Q101] Qualified

FEATURES

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● VDSS = 75V G S RDS(on) = 0.0126Ω ID = 75A

DESCRIPTION

Specifically designed for Automotive applications, this design of HEXFET® Power MOSFETs utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications. TO-220AB

ABSOLUTE MAXIMUM RATINGS

Parameter ID @ TC = 25°C ID @ TC = 100°C ID @ TC = 25°C IDM PD @TC = 25°C VGS EAS EAS (6 sigma) IAR EAR TJ TSTG Continuous Drain Current, VGS @ 10V (Silicon limited) Continuou...