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IRF3007LPBF Datasheet PDF

International Rectifier IRF3007LPBF

This design of HEXFET® Power MOSFETs utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. These combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.
Part No. IRF3007LPBF
Datasheet IRF3007LPBF Download
Manufacturer
International Rectifier
Description HEXFET Power MOSFET
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IRF3007LPBF datasheet page 1 preview

APPLICATIONS

l Industrial Motor Drive

FEATURES

l Ultra Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free G

DESCRIPTION

Additional features of this HEXFET power MOSFET are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.

ABSOLUTE MAXIMUM RATINGS

ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS EAS EAS (6 sigma) IAR EAR TJ TSTG Parameter Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current  Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy‚ Single Pulse Avalanche Energy Tested Value‡ Avalanche Current R
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