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IRF3205PBF Datasheet PDF

International Rectifier IRF3205PBF

This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts.
Part No. IRF3205PBF
Datasheet IRF3205PBF Download
Manufacturer
International Rectifier
Description HEXFET Power MOSFET
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IRF3205PBF datasheet page 1 preview

DESCRIPTION

Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.

ABSOLUTE MAXIMUM RATINGS

ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS IAR EAR dv/dt TJ TSTG Parameter Continuous Drain Current, VGS @ 10V Continu
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