FEATURES
: n n n n n Repetitive Avalanche Ratings Dynamic dv/dt Rating Hermetically Sealed Simple Drive Requirements Ease of Paralleling ABSOLUTE MAXIMUM RATINGS
Parameter ID @ VGS = 10V, TC = 25°C ID @ VGS = 10V, TC = 100°C I DM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current ➀ Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy ➁ Avalanche Current ➀ Repetitive Avalanche Energy ➀ Peak Diode Recovery dv/dt ➂ Operating Junction Storage Temperature Range Lead Temperature Weight For footnotes refer to the last page 14 9.0 56 150 1.2 ±20 11.3 14 15 4.0 -55 to 150 300 (0.063 in. (1.6mm) from case for 10s) 11.5 (typical) Units A W W/°C V mJ A mJ V/ns o C g 1 01/22/01 IRF350 ELECTRICAL CHARACTERISTICS
@ Tj = 25°C (Unless Otherwise Specified) Parameter BVDSS ∆BV DSS/∆TJ RDS(on) VGS(th) gfs IDSS Drain-to-Source Breakdown Voltage Temperature Coefficient of Breakdown Voltage Static Drain-to-Source On-State Resistance Gate Threshold Voltage Forward Transconductance Zero Gate Voltage Drain Current Min 400 — — — 2.0 6.0 — — — — 52 5.
International Rectifier
