International Rectifier IRF3610SPBF
HEXFET Power MOSFET
| Part No. | IRF3610SPBF |
|---|---|
| Datasheet | IRF3610SPBF Download |
| Manufacturer |  International Rectifier |
| Description | HEXFET Power MOSFET |
| Buy | Stock & Price |
APPLICATIONS
l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode dV/dt and dI/dt Capability l Lead-Free G S VDSS RDS(on) typ. max. ID 100V 9.3mΩ 11.6mΩ 103A D S G D2Pak IRF3610SPbF G D S Gate Drain SourceABSOLUTE MAXIMUM RATINGS
Symbol ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS dv/dt TJ TSTG Parameter Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Maximum Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Max. 103 73 410 333 2.2 ± 20 23 -55 to + 175 300 (1.6mm from case) Units A W W/°C V V/ns °C d f Avalanche Characteristics EAS IAR EAR Single Pulse Avalanche Energy (Thermally Limited) Avalanche Current Repetitive Avalanche Energy à d Thermal Resistance Symbol RθJC RθJA 460 See Fig.
