Datasheet4U.com

IRF3805PbF Datasheet PDF

International Rectifier IRF3805PbF

This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.
Part No. IRF3805PbF
Datasheet IRF3805PbF Download
Manufacturer
International Rectifier
Description Power MOSFET
Buy Stock & Price
IRF3805PbF datasheet page 1 preview

FEATURES

l Advanced Process Technology l Ultra Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free

DESCRIPTION

Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.

ABSOLUTE MAXIMUM RATINGS

G TO-220AB IRF3805PbF ID @ TC = 25°C ID @ TC = 100°C ID @ TC = 25°C IDM PD @TC = 25°C VGS EAS (Thermally limited) EAS (Tested ) IAR EAR TJ TSTG Parameter Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V (Silicon Limited) ™ Continuous Drain Current, VGS @ 10V (Package limited) Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage d Single Pulse Avalanche Energy h Single Pulse Avalanche Energy Tested Value Ù Avalanche Current g Repetitive Avalanche En...
IRF3805PbF page 2 preview IRF3805PbF page 3 preview