International Rectifier IRF3808LPBF
This combination makes the design an extremely efficient and reliable choice for use in higher power Automotive electronic systems and a wide variety of other applications.| Part No. | IRF3808LPBF |
|---|---|
| Datasheet | IRF3808LPBF Download |
| Manufacturer |  International Rectifier |
| Description | AUTOMOTIVE MOSFET |
| Buy | Stock & Price |
APPLICATIONS
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● IRF3808SPbF IRF3808LPbF D Integrated Starter Alternator 42 Volts Automotive Electrical Systems Lead-Free Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax HEXFET® Power MOSFET VDSS = 75V RDS(on) = 0.007Ω S Benefits
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● G ID = 106A
DESCRIPTION
ABSOLUTE MAXIMUM RATINGS
ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG Designed specifically for Automotive applications, this Advanced Planar Stripe HEXFET ® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175°C junction operating temperature, low RθJC, fast switching speed and improved repetitive avalanche rating. Parameter Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to...
