International Rectifier IRF4104LPbF
Power MOSFET
| Part No. | IRF4104LPbF |
|---|---|
| Datasheet | IRF4104LPbF Download |
| Manufacturer |  International Rectifier |
| Description | Power MOSFET |
| Buy | Stock & Price |
FEATURES
l Advanced Process Technology l Ultra Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-FreeDESCRIPTION
Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low onresistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.ABSOLUTE MAXIMUM RATINGS
IRF4104LPbF HEXFET® Power MOSFET D VDSS = 40V G RDS(on) = 5.5mΩ S ID = 75A TO-220AB IRF4104 D2Pak IRF4104S TO-262 IRF4104L Parameter ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) ID @ TC = 100°C Continuous Drain Current, VGS @ 10V ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Package limited) IDM Pulsed Drain Current PD @TC = 25°C Power Dissipation Max.
