DESCRIPTION
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. The low thermal resistance and low package cost of the TO- 220 contribute to its wide acceptance throughout the industry. ABSOLUTE MAXIMUM RATINGS
Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C Continuous Drain Current, VGS @ -10V Continuous Drain Current, VGS @ -10V Pulsed Drain Current Power Dissipation Linear Derating Factor VGS EAS IAR EAR dv/dt Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt TJ TSTG Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 screw Thermal Resistance RθJC RθCS RθJA Parameter Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient PD - 94816 IRF4905PbF HEXFET® Power MOSFET D VDSS = -55V RDS(on) = 0.02Ω S ID = -74A TO-220AB Max. -74 -52 -260 200 1.3 ± 20 930 -38 20 -5.0 -55 to + 175 300 (1.6mm from case ) 10 lbf●in (1.1N●m) Typ. ––– 0.50 ––– Max.
International Rectifier
