International Rectifier IRF4905LPBF
HEXFET Power MOSFET
| Part No. | IRF4905LPBF |
|---|---|
| Datasheet | IRF4905LPBF Download |
| Manufacturer |  International Rectifier |
| Description | HEXFET Power MOSFET |
| Buy | Stock & Price |
FEATURES
O O O O O O HEXFET® Power MOSFET D O Advanced Process Technology Ultra Low On-Resistance 150°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Some Parameters Are Differrent from IRF4905S Lead-Free VDSS = -55V RDS(on) = 20mΩ G S ID = -42A DDESCRIPTION
FEATURES
of this design are a 150°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in a wide variety of other applications. D G D S G D S D2Pak IRF4905SPbF G D TO-262 IRF4905LPbF SABSOLUTE MAXIMUM RATINGS
Parameter Gate Drain Max. -70 -44 -42 -280 170 1.3 ± 20 Source Units A ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) ID @ TC = 100°C Continuous Drain Current, VGS @ 10V (Silicon Limited) ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Package Limited) IDM Pulsed Drain Current PD @TC = 25°C Power Dissipation Linear Derating Facto...
