International Rectifier IRF4905S
Power MOSFET
| Part No. | IRF4905S |
|---|---|
| Datasheet | IRF4905S Download |
| Manufacturer |  International Rectifier |
| Description | Power MOSFET |
| Buy | Stock & Price |
FEATURES
O Advanced Process Technology O Ultra Low On-Resistance O 150°C Operating Temperature O Fast Switching O Repetitive Avalanche Allowed up to Tjmax O Some Parameters Are Differrent from IRF4905S O Lead-FreeDESCRIPTION
FEATURES
of this design are a 150°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in a wide variety of other applications. G D HEXFET® Power MOSFET D VDSS = -55V RDS(on) = 20mΩ ID = -42A S D S D G D2Pak IRF4905SPbF S D G TO-262 IRF4905LPbFABSOLUTE MAXIMUM RATINGS
G Gate Parameter ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) ID @ TC = 100°C Continuous Drain Current, VGS @ 10V (Silicon Limited) ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Package Limited) IDM Pulsed Drain Current PD @TC = 25°C Power Dissipation Linear Derating Factor VGS Gate-to-Source Voltage d EAS (Thermally limited) Singl...
