DESCRIPTION
Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. G The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. ABSOLUTE MAXIMUM RATINGS
ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS IAR EAR dv/dt TJ TSTG Parameter Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 srew Thermal Resistance RθJC RθCS RθJA Parameter Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient PD - 94812 IRF540NPbF HEXFET® Power MOSFET D VDSS = 100V RDS(on) = 44mΩ ID = 33A S TO-220AB Max. 33 23 110 130 0.87 ± 20 16 13 7.0 -55 to + 175 300 (1.6mm from case ) 10 lbf●in (1.1N●m) Typ. ––– 0.50 ––– Max.
International Rectifier
