DESCRIPTION
These P-channel HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This package is ideal for applications where printed circuit board space is at a premium. It's unique thermal design and RDS(on) reduction enables a current-handling increase of nearly 300% compared to the SOT-23. VDSS -40V PD-95262B IRF5803PbF HEXFET® Power MOSFET RDS(on) max (mW) 112@VGS = -10V 190@VGS = -4.5V ID -3.4A -2.7A D 1 A 6 D D 2 5 D G 3 4 S Top View TSOP-6 ABSOLUTE MAXIMUM RATINGS
VDS ID @ TA = 25°C ID @ TA= 70°C IDM PD @TA = 25°C PD @TA = 70°C VGS TJ, TSTG Parameter Drain- Source Voltage Continuous Drain Current, VGS @ -10V Continuous Drain Current, VGS @ -10V Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Junction and Storage Temperature Range Thermal Resistance Parameter RθJA Maximum Junction-to-Ambient Max. -40 -3.4 -2.7 -27 2.0 1.3 16 ± 20 -55 to + 150 Max.
International Rectifier
