APPLICATIONS
P-Channel HEXFET Low VF Schottky Rectifier SO-8 Footprint A A S G 1 8 K K D D VDSS = -40V RDS(on) = 112mΩ Schottky Vf = 0.51V 2 7 3 6 4 5 DESCRIPTION
HEXFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. Combining this technology with International Rectifier's low forward drop Schottky rectifiers results in an extremely efficient device suitable for use in a wide variety of portable electronics applications. The SO-8 package is designed for vapor phase, infrared or wave soldering techniques. T op V ie w SO-8 ABSOLUTE MAXIMUM RATINGS
(TA = 25°C Unless Otherwise Noted) Parameter ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C PD @TA = 70°C VGS TJ, TSTG Continuous Drain Current, VGS @ -10V Continuous Drain Current, VGS @ -10V Pulsed Drain Current ➀ Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Junction and Storage Temperature Range Maximum -3.4 -2.7 -27 2.0 1.3 16 ± 20 -55 to +150 Units A W...
International Rectifier
