DESCRIPTION
These P-channel HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications. This Dual TSOP-6 package is ideal for applications where printed circuit board space is at a premium and where maximum functionality is required. With two die per package, VDSS -20V PD - 95469B IRF5810PbF HEXFET® Power MOSFET RDS(on) max (mW) 90@VGS = -4.5V 135@VGS = -2.5V ID -2.9A -2.3A TSOP-6 ABSOLUTE MAXIMUM RATINGS
Parameter VDS ID @ TA = 25°C ID @ TA= 70°C IDM PD @TA = 25°C PD @TA = 70°C VGS TJ, TSTG Drain- Source Voltage Continuous Drain Current, VGS @ -4.5V Continuous Drain Current, VGS @ -4.5V Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Junction and Storage Temperature Range Max. -20 -2.9 -2.3 -11 0.96 0.62 0.008 ± 12 -55 to + 150 Units V A W mW/°C V °C Thermal Resistance RθJA Parameter Maximum Junction-to-Ambient Max.
International Rectifier
