International Rectifier IRF5NJ9540
This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. These devices are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high-energy pulse circuits.| Part No. | IRF5NJ9540 |
|---|---|
| Datasheet | IRF5NJ9540 Download |
| Manufacturer |  International Rectifier |
| Description | P-Channel Power MOSFET |
| Buy | Stock & Price |
DESCRIPTION
Fifth Generation HEXFET® power MOSFETs from IR HiRel utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon unit area. SMD-0.5FEATURES
● Low RDS(on)● Avalanche Energy Ratings
● Dynamic dv/dt Rating
● Simple Drive Requirements
● Hermetically Sealed
● Surface Mount
● Light Weight
● ESD Rating: Class 2 per MIL-STD-750, Method 1020
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter ID1 @ VGS = -10V, TC = 25°C Continuous Drain Current ID2 @ VGS = -10V, TC = 100°C Continuous Drain Current IDM @ TC = 25°C Pulsed Drain Current PD @TC = 25°C Maximum Power Dissipation Linear Derating Factor VGS EAS IAR EAR dv/dt Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt TJ Operating Junction and TSTG Storage Temperature Range Package Mounting Surface Temp Weight Value -18 -11 -72 75 0.6 ±20 260 -11 7.5 4.1 -55 to + 150 300 (for 5s) 1.0 (Typical) Pre-Irradiation Units A W W/°C V mJ A mJ V/ns °C g For Footnotes, refer to the page 2.
