International Rectifier IRF5Y31N20
This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. These devices are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high-energy pulse circuits.IRF5Y31N20 Specifications
- Mount Type : Through Hole
- Breakdown Voltage : 200V
- Drain-Source Resistance : 92mΩ
- Terminals : 3
- Max Power Dissipation : 100W
- Max Operating Temp : 150°C
- Min Operating Temp : -55°C
Source:
Octopart
| Part No. | IRF5Y31N20 |
|---|---|
| Datasheet | IRF5Y31N20 Download |
| Manufacturer |  International Rectifier |
| Description | Power MOSFET |
| Buy | Stock & Price |
FEATURES
: n n n n n n n Low RDS(on) Avalanche Energy Ratings Dynamic dv/dt Rating Simple Drive Requirements Ease of Paralleling Hermetically Sealed Light WeightABSOLUTE MAXIMUM RATINGS
Parameter ID @ VGS = 10V, TC = 25°C ID @ VGS = 10V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current ➀ Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy ➁ Avalanche Current ➀ Repetitive Avalanche Energy ➀ Peak Diode Recovery dv/dt ➂ Operating Junction Storage Temperature Range Lead Temperature Weight * Current is limited by package For footnotes refer to the last page 18* 14 72 100 0.8 ±20 170 18 10 1.7 -55 to 150 300 (0.063in./1.6mm from case for 10s) 4.3 (Typical) Units A W W/°C V mJ A mJ V/ns o C g 1 01/07/02 IRF5Y31N20ELECTRICAL CHARACTERISTICS
@ Tj = 25°C (Unless Otherwise Specified) Parameter BVDSS Drain-to-Source Breakdown Voltage ∆ BV DSS/ ∆ T J Temperature Coeffic...
