International Rectifier IRF614SPBF
HEXFET Power MOSFET
PD-95984 IRF614SPbF Lead-Free 1 12/21/04 IRF614SPbF 2 IRF614SPbF 3 IRF614SPbF 4 IRF614SPbF 5 IRF614SPbF 6 IRF614SPbF Peak Diode Recovery dv/dt Test Circuit + Circuit Layout Considerations
● Low Stray Inductance
● Ground Plane
● Low Leakage Inductance Current Transformer + + -
● dv/dt controlled by RG
● ISD controlled by Duty Factor "D"
● D.U.T. - Device Under Test + - * Reverse Polarity for P-Channel ** Use P-Channel Driver for P-Channel Measurements Driver Gate Drive P.W. Period D= P.W. Period VGS=10V D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt VDD Re-Applied Voltage Inductor Curent Body Diode Forward Drop Ripple ≤ 5% ISD *** VGS = 5.0V for Logic Level and 3V Drive Devices Fig 14 For N Channel HEXFETS 7 IRF614SPbF D2Pak Package Outline Dimensions are shown in millimeters (inches) D2Pak Part Marking Information THIS IS AN IRF530S WIT H LOT CODE 8024 AS S EMBLED ON WW 02, 2000 IN THE AS S EMBLY LINE "L" Note: "...
● Low Stray Inductance
● Ground Plane
● Low Leakage Inductance Current Transformer + + -
● dv/dt controlled by RG
● ISD controlled by Duty Factor "D"
● D.U.T. - Device Under Test + - * Reverse Polarity for P-Channel ** Use P-Channel Driver for P-Channel Measurements Driver Gate Drive P.W. Period D= P.W. Period VGS=10V D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt VDD Re-Applied Voltage Inductor Curent Body Diode Forward Drop Ripple ≤ 5% ISD *** VGS = 5.0V for Logic Level and 3V Drive Devices Fig 14 For N Channel HEXFETS 7 IRF614SPbF D2Pak Package Outline Dimensions are shown in millimeters (inches) D2Pak Part Marking Information THIS IS AN IRF530S WIT H LOT CODE 8024 AS S EMBLED ON WW 02, 2000 IN THE AS S EMBLY LINE "L" Note: "...