DESCRIPTION
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. HEXFET® Power MOSFET D VDSS = -150V RDS(on) = 0.29Ω G S ID = -13A TO-220AB ABSOLUTE MAXIMUM RATINGS
Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ -10V Continuous Drain Current, VGS @ -10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 screw Max. -13 -9.0 -44 110 0.71 ± 20 310 -6.6 11 -5.0 -55 to + 175 300 (1.6mm from case ) 10 lbf●in (1.1N●m) Units A W W/°C V mJ A mJ V/ns °C Thermal Resistance Parameter RθJC RθCS RθJA Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient Typ. ––– 0.50 ––– Max.
International Rectifier
