International Rectifier IRF640NPBF
Power MOSFET
| Part No. | IRF640NPBF |
|---|---|
| Datasheet | IRF640NPBF Download |
| Manufacturer |  International Rectifier |
| Description | Power MOSFET |
| Buy | Stock & Price |
ABSOLUTE MAXIMUM RATINGS
Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor VGS EAS IAR EAR dv/dt Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt TJ TSTG Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 srew PD - 95046A IRF640NPbF IRF640NSPbF IRF640NLPbF HEXFET® Power MOSFET D VDSS = 200V RDS(on) = 0.15Ω G ID = 18A S TO-220AB IRF640NPbF D2Pak IRF640NSPbF TO-262 IRF640NLPbF Max. 18 13 72 150 1.0 ± 20 247 18 15 8.1 -55 to +175 300 (1.6mm from case ) 10 lbf●in (1.1N●m) Units A W W/°C V mJ A mJ V/ns °C 1 07/23/10 IRF640N/S/LPbFELECTRICAL CHARACTERISTICS
@ TJ = 25°C (unless otherwise specified) V(BR)DSS ∆V(BR)DSS/∆TJ RDS(on) VGS(th) gfs Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp.
