International Rectifier IRF644NPbF
Power MOSFET
| Part No. | IRF644NPbF |
|---|---|
| Datasheet | IRF644NPbF Download |
| Manufacturer |  International Rectifier |
| Description | Power MOSFET |
| Buy | Stock & Price |
ABSOLUTE MAXIMUM RATINGS
ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG Parameter Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 srew Document Number: 91038 PD - 94859 IRF644NPbF IRF644NS IRF644NL HEXFET® Power MOSFET D VDSS = 250V RDS(on) = 240mΩ G ID = 14A S TO-220AB IRF644NPbF D2Pak IRF644NS TO-262 IRF644NL Max. 14 9.9 56 150 1.0 ± 20 180 8.4 15 7.9 -55 to + 175 300 (1.6mm from case ) 10 lbf●in (1.1N●m) Units A W W/°C V mJ A mJ V/ns °C 12/2/03 1 IRF644NPbF/644NSPbF/644NLPbFELECTRICAL CHARACTERISTICS
@ TJ = 25°C (unless otherwise specified) V(BR)DSS ∆V(BR)DSS/∆TJ RDS(on) VGS(th) gfs Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp.
