International Rectifier IRF6616TRPBF
Power MOSFET
IRF6616TRPBF Specifications
- Mount Type : Surface Mount
- Current Rating : 19A
- Breakdown Voltage : 40V
- Threshold Voltage : 1.8V
- RDS(on) Max : 5mΩ
- Input Capacitance : 3.765nF
- Terminals : 2
- Channels : 1
- Rise Time : 19ns
- Fall Time : 4.4ns
- Max Power Dissipation : 89W
- Power Dissipation : 2.8W
- Voltage Rating DC : 30V
- Max Operating Temp : 150°C
- Min Operating Temp : -40°C
Source:
Octopart
| Part No. | IRF6616TRPBF |
|---|---|
| Datasheet | IRF6616TRPBF Download |
| Manufacturer |  International Rectifier |
| Description | Power MOSFET |
| Buy | Stock & Price |
DESCRIPTION
The IRF6616 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve low combined on-state and switching loss in a package that has the footprint area of an SO-8 and only 0.7mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%. The IRF6616 balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors operating at higher frequencies. The IRF6616 is id...
