International Rectifier IRF6618TR1
HEXFET Power MOSFET
IRF6618TR1 Specifications
- Mount Type : Surface Mount
- Current Rating : 150A
- Breakdown Voltage : 30V
- Threshold Voltage : 1.64V
- RDS(on) Max : 2.2mΩ
- Input Capacitance : 5.64nF
- Terminals : 3
- Reverse Recovery Time : 43ns
- Channels : 1
- Rise Time : 71ns
- Fall Time : 8.1ns
- Max Power Dissipation : 89W
- Power Dissipation : 2.8W
- Max Operating Temp : 150°C
- Min Operating Temp : -40°C
Source:
Octopart
| Part No. | IRF6618TR1 |
|---|---|
| Datasheet | IRF6618TR1 Download |
| Manufacturer |  International Rectifier |
| Description | HEXFET Power MOSFET |
| Buy | Stock & Price |
DESCRIPTION
The IRF6618 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, IMPROVING previous best thermal resistance by 80%. The IRF6618 balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors operating at higher frequencies. The IRF6618 has been optimized for parameters that are critical in synchronous buck converters including Rds(on), gate charge and Cdv/dt-induced turn on immunity.
