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IRF6628TRPBF Datasheet PDF

International Rectifier IRF6628TRPBF

DirectFET Power MOSFET

Part No. IRF6628TRPBF
Datasheet IRF6628TRPBF Download
Manufacturer
International Rectifier
Description DirectFET Power MOSFET
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IRF6628TRPBF datasheet page 1 preview

DESCRIPTION

The IRF6628PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.6 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%. The IRF6628PbF balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors operating at higher frequencies. The IRF6628PbF has been optimized for parameters that are critical in synchronous buck including Rds(on), gate charge and Cdv/dt-induced turn on immunity.
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