Datasheet4U.com

IRF6631 Datasheet PDF

International Rectifier IRF6631

DirectFET Power MOSFET

Part No. IRF6631
Datasheet IRF6631 Download
Manufacturer
International Rectifier
Description DirectFET Power MOSFET
Buy Stock & Price
IRF6631 datasheet page 1 preview

DESCRIPTION

The IRF6631 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.6 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%. The IRF6631 balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors operating at higher frequencies. The IRF6631 has been optimized for parameters that are critical in synchronous buck including Rds(on) and gate charge to minimize losses in the control FET socket.
IRF6631 page 2 preview IRF6631 page 3 preview