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IRF6643TRPbF - DIGITAL AUDIO MOSFET

General Description

This Digital Audio MOSFET is specifically designed for Class-D audio amplifier applications.

This MOSFET utilizes the latest processing techniques to achieve low on-resistance per silicon area.

Key Features

  • Latest MOSFET silicon technology.
  • Key parameters optimized for Class-D audio amplifier.

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Datasheet Details

Part number IRF6643TRPbF
Manufacturer IRF
File Size 453.74 KB
Description DIGITAL AUDIO MOSFET
Datasheet download datasheet IRF6643TRPbF Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DIGITAL AUDIO MOSFET Features • Latest MOSFET silicon technology • Key parameters optimized for Class-D audio amplifier applications • Low RDS(on) for improved efficiency • Low Qg for better THD and improved efficiency • Low Qrr for better THD and lower EMI • Low package stray inductance for reduced ringing and lower EMI • Can deliver up to 200 W per channel into 8Ω load in half-bridge configuration amplifier • Dual sided cooling compatible • Compatible with existing surface mount technologies • RoHS compliant, halogen-free • Lead-free (qualified up to 260°C reflow) IRF6643TRPbF Key Parameters VDS RDS(ON) typ. @ VGS = 10V Qg typ. RG(int) typ. 150 29 39 0.9 V mΩ nC Ω MZ DirectFET® ISOMETRIC Applicable DirectFET Outline and Substrate Outline (see p.