IRF6643TRPbF
Overview
- Latest MOSFET silicon technology
- Key parameters optimized for Class-D audio amplifier applications
- Low RDS(on) for improved efficiency
- Low Qg for better THD and improved efficiency
- Low Qrr for better THD and lower EMI
- Low package stray inductance for reduced ringing and lower EMI
- Can deliver up to 200 W per channel into 8Ω load in half-bridge configuration amplifier
- Dual sided cooling compatible
- Compatible with existing surface mount technologies
- RoHS compliant, halogen-free
