Datasheet Summary
DIGITAL AUDIO MOSFET
Features
- Latest MOSFET silicon technology
- Key parameters optimized for Class-D audio amplifier applications
- Low RDS(on) for improved efficiency
- Low Qg for better THD and improved efficiency
- Low Qrr for better THD and lower EMI
- Low package stray inductance for reduced ringing and lower EMI
- Can deliver up to 200 W per channel into 8Ω load in half-bridge configuration amplifier
- Dual sided cooling patible
- patible with existing surface mount technologies
- RoHS pliant, halogen-free
- Lead-free (qualified up to 260°C reflow)
Key Parameters VDS RDS(ON) typ. @ VGS = 10V Qg typ. RG(int) typ. 150 29 39 0.9 V mΩ nC Ω
DirectFET®...