International Rectifier IRF6665TRPbF
The IRF6665PbF device utilizes DirectFETTM packaging technology. The DirectFETTM package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing method and processes. The DirectFETTM package also allows dual sided cooling to maximize thermal transfer in power systems, improving thermal resistance and power dissipation.| Part No. | IRF6665TRPbF |
|---|---|
| Datasheet | IRF6665TRPbF Download |
| Manufacturer |  International Rectifier |
| Description | Digital Audio MOSFET |
| Buy | Stock & Price |
FEATURES
● Latest MOSFET Silicon technology● Key parameters optimized for Class-D audio amplifier applications
● Low RDS(on) for improved efficiency
● Low Qg for better THD and improved efficiency
● Low Qrr for better THD and lower EMI
● Low package stray inductance for reduced ringing and lower EMI
● Can deliver up to 100W per channel into 8Ω with no heatsink
● Dual sided cooling compatible
● Compatible with existing surface mount technologies
● RoHS compliant containing no lead or bromide
●Lead-Free (Qualified up to 260°C Reflow)
KEY PARAMETERS
VDS 100 RDS(on) typ. @ VGS = 10V Qg typ. RG(int) typ. 53 8.7 1.9 V m: nC SH DirectFET ISOMETRIC Applicable DirectFET Outline and Substrate Outline (see p. 6, 7 for details) SQ SX ST SH MQ MX MT MNDESCRIPTION
This Digital Audio MOSFET is specifically designed for Class-D audio amplifier applications. This MOSFET utilizes the latest processing techniques to achieve low on-resistance per silicon area. Furthermore, gate charge, body-diode rev...
