International Rectifier IRF6668
DirectFet Power MOSFET
DESCRIPTION
ABSOLUTE MAXIMUM RATINGS
Parameter VDS VGS ID @ TC = 25°C ID @ TC = 70°C IDM IS @ TC = 25°C IS @ TC = 70°C ISM Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Max. Units V Pulsed Drain Current Continuous Source Current (Body Diode) Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) e f f e f f 80 ±20 55 44 170 81 52 170 A TC measured with thermocouple mounted to top (Drain) of part. Click on this section to link to the appropriate technical paper. Click on this section to link to the DirectFET Website. Repetitive rating; pulse width limited by max. junction temperature. Notes: 1 11/4/05 IRF6668 Electrical Characteristic @ TJ = 25°C (unless otherwise specified) Parameter BVDSS ∆BVDSS/∆TJ RDS(on) VGS(th) ∆VGS(th)/∆TJ IDSS IGSS gfs Qg Qgs1 Qgs2 Qgd Qgodr Qsw Qoss RG (Internal) td(on) tr td(off) tf Ciss Coss Crss Coss Coss Drain-to-Source Breakdown Voltage Breakdown Voltage Temp.