International Rectifier IRF6691
HEXFET Power MOSFET
| Part No. | IRF6691 |
|---|---|
| Datasheet | IRF6691 Download |
| Manufacturer |  International Rectifier |
| Description | HEXFET Power MOSFET |
| Buy | Stock & Price |
DESCRIPTION
The IRF6691 combines IRs industry leading DirectFET package technology with the latest monolithic die technology, which integrates MOSFET plus free-wheeling Schottky diode. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, IMPROVING previous best thermal resistance by 80%. The IRF6691 is characterized with reduced on resistance (R DS(on)), reverse recovery charge (Q rr) and source to drain voltage (VSD ) to reduce conduction, reverse recovery and deadtime losses. These reduced total losses along with high Cdv/dt immunity make this product ideal for high efficiency DC-DC converters that power the latest generation of processors operating at higher frequencies. The IRF6691 has been optimized for parameters that are critical for synchronous MOSFET sockets operating in 12 volt buss converters.
